Growth of epitaxial InAs nanowires in a simple closed system.

The epitaxial growth of InAs nanowires on an InAs(111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs(111) substrate. High quality InAs nanowires can be produced by this technique, with the nanowire diameter controllable by the variation of growth temperature. The composition of the seed particle at the tip of the nanowire indicates that the nanowires grew via the vapor-liquid-solid growth mechanism but with Au–In as the liquid alloy. [ABSTRACT FROM AUTHOR]