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Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs.
- Source :
- International Journal of High Speed Electronics & Systems; Jun-Sep2024, Vol. 33 Issue 2/3, p1-5, 5p
- Publication Year :
- 2024
-
Abstract
- This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs. [ABSTRACT FROM AUTHOR]
- Subjects :
- QUANTUM gates
QUANTUM dots
STATIC random access memory
OXIDES
Subjects
Details
- Language :
- English
- ISSN :
- 01291564
- Volume :
- 33
- Issue :
- 2/3
- Database :
- Complementary Index
- Journal :
- International Journal of High Speed Electronics & Systems
- Publication Type :
- Academic Journal
- Accession number :
- 179282275
- Full Text :
- https://doi.org/10.1142/S0129156424400731