An analytical calculation method of SiC MOSFET junction temperature based on thermal network theory and Laplace transform.

In order for full utilization of the switching devices and safe continued operation of the power converter at the same time, the junction temperature of the switching devices needs to be accurately monitored without shutting down the motor drive. This paper derives an analytical junction temperature calculation method by using Laplace transformation and thermal network theory. Based on an actual motor drive, a simulation model is established using platform for power electronic systems (PLECS). Through comparison, the derived method is proven to be able to calculate junction temperature accurately. [ABSTRACT FROM AUTHOR]