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Giant piezotronic effect in ferroelectric field effect transistor.
- Source :
- Nano Research; Sep2024, Vol. 17 Issue 9, p8465-8471, 7p
- Publication Year :
- 2024
-
Abstract
- The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors. Ferroelectric materials, as a type of piezoelectric materials, possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials. Here, we propose a strain modulated ferroelectric field-effect transistor (St-FeFET) utilizing external strain instead of gate voltage to achieve ferroelectric modulation, which eliminates the need for gate voltage. By applying a very small strain (0.01%), the St-FeFET can achieve a maximum on-off current ratio of 1250% and realizes a gauge factor (GF) of 1.19 × 10<superscript>6</superscript>, which is much higher than that of conventional strain sensors. This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19980124
- Volume :
- 17
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Nano Research
- Publication Type :
- Academic Journal
- Accession number :
- 179142752
- Full Text :
- https://doi.org/10.1007/s12274-024-6849-1