High performance ZnO quantum dot/graphene/hexagonal Boron Nitride/GaN heterostructure based UV detector.

High performance ultraviolet (UV) photodetectors are in great demand for strategic applications such as military, flameout protection, missile flame detection and many other applications based on different sub bands of UV detection. Conventional UV detectors are constrained by size, high dark current noise and cost. There is a need for high performance, compact size and less expensive UV detectors. In this paper, a ZnO quantum dot photo-doped graphene/hexagonal Boron Nitride (hBN)/ GaN substrate heterostructure based UV detector is designed, simulated and analyzed for its performance prediction. Electrical and optical characteristics of the device are obtained using a device simulator. The hBN layer at the graphene/GaN interface is used to decrease the dark current. ZnO quantum dot layer deposited on the graphene/hBN/GaN heterojunction help in increasing the responsivity of the device due to its long trapped-charge life time. This detector provides high responsivity in the deep UV to UVA region (100 nm-350 nm) compared to the devices without hBN and ZnO quantum dots layers. [ABSTRACT FROM AUTHOR]