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Enhanced electron transport and optical properties of experimentally synthesized monolayer Si9C15: a comprehensive DFT study for nanoelectronics and photocatalytic applications.

Authors :
Yuehua Xu
Daqing Li
Source :
Physical Chemistry Chemical Physics (PCCP); 8/28/2024, Vol. 26 Issue 32, p21789-21800, 12p
Publication Year :
2024

Abstract

Two-dimensional silicon-carbide (Si<subscript>x</subscript>C<subscript>y</subscript>) materials stand out for their compatibility with current siliconbased technologies, offering unique advantages in nanoelectronics and photocatalysis. In this study, we employ density functional theory and nonequilibrium Green's function methods to investigate the electronic properties, electron transport characteristics, and optoelectronic qualities of experimentally synthesized monolayer Si9C15. Utilizing the modified deformation potential theory formula, we unveil Si9C15's significant directional anisotropy in electron mobility (706.42 cm2 V-1 s-1) compared to holes (432.84 cm² V<superscript>-1</superscript> s<superscript>-1</superscript>) in the a direction. The electrical transport calculations reveal that configurations with a 3 nm channel length demonstrate an ON state when biased, reaching a peak current of 150 nA. Moreover, this maximum current value escalates to 200 nA under tensile strain, marking an increase of approximately 100 times compared to the 5 nm channel, which remains in an OFF state. Si<subscript>9</subscript>C<subscript>15</subscript> exhibits high light absorption coefficients (B105 cm<superscript>-1</superscript>) and suitable band edge positions for water splitting at pH 0-7. Applying 1-5% tensile strain can tune the conduction band minimum and valence band maximum closer to the standard redox potentials, enhancing photocatalytic water splitting efficiency. Remarkably, under illumination at pH 0 and 7, Si<subscript>9</subscript>C<subscript>15</subscript> can spontaneously catalyze water splitting, demonstrating its potential as a highly efficient photocatalyst. Our findings emphasize the importance of strain control and device length optimization for performance enhancement in nanoelectronics and renewable energy applications, positioning Si<subscript>9</subscript>C<subscript>15</subscript> as a promising material for high-performance field-effect transistors and photocatalytic water splitting. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14639076
Volume :
26
Issue :
32
Database :
Complementary Index
Journal :
Physical Chemistry Chemical Physics (PCCP)
Publication Type :
Academic Journal
Accession number :
179016814
Full Text :
https://doi.org/10.1039/d4cp01456a