Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes.

MLA

Lee, Hyung-Jin, et al. “Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes.” Electronic Materials Letters, vol. 20, no. 5, Sept. 2024, pp. 537–47. EBSCOhost, https://doi.org/10.1007/s13391-024-00484-1.

APA

Lee, H.-J., Moon, S.-Y., Lee, K.-Y., & Koo, S.-M. (2024). Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes. Electronic Materials Letters, 20(5), 537–547. https://doi.org/10.1007/s13391-024-00484-1

Chicago

Lee, Hyung-Jin, Soo-Young Moon, Kung-Yen Lee, and Sang-Mo Koo. 2024. “Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes.” Electronic Materials Letters 20 (5): 537–47. doi:10.1007/s13391-024-00484-1.