Patent Application Titled "Flash Memory And Method For Forming The Same" Published Online (USPTO 20240250149).

A patent application titled "Flash Memory And Method For Forming The Same" has been published online. The inventors have developed a flash memory and a method for forming it that addresses issues related to miniaturization and the coupling effect between adjacent floating gates. The flash memory includes multiple gate stacks, a spacer structure with thin and thick spacers, a dielectric structure, and an air gap. The method involves forming gate stacks, applying spacer layers, forming a sacrificial layer, removing portions of the layers, and sealing the trench with a dielectric structure to create an air gap. The invention aims to improve the data retention capability and performance of flash memory devices. [Extracted from the article]