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Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing.
- Source :
- Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-10, 10p
- Publication Year :
- 2024
-
Abstract
- Ge<subscript>1−x</subscript>Sn<subscript>x</subscript> and Si<subscript>1−x−y</subscript>Ge<subscript>y</subscript>Sn<subscript>x</subscript> alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective bandgap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the complementary metal-oxide-semiconductor technology. Unfortunately, the equilibrium solid solubility of Sn in Si<subscript>1−x</subscript>Ge<subscript>x</subscript> is less than 1% and the pseudomorphic growth of Si<subscript>1−x−y</subscript>Ge<subscript>y</subscript>Sn<subscript>x</subscript> on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge<subscript>0.94</subscript>Sn<subscript>0.06</subscript> and Si<subscript>0.14</subscript>Ge<subscript>0.8</subscript>Sn<subscript>0.06</subscript> thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post-growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, x-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall-effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4 × 10<superscript>19</superscript> cm<superscript>−3</superscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 136
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 178879594
- Full Text :
- https://doi.org/10.1063/5.0218703