体硅 CMOS工艺下一种带隙基准的单粒子辐射特性分析.

MLA

文溢, et al. “体硅 CMOS工艺下一种带隙基准的单粒子辐射特性分析. (Chinese).” Journal of National University of Defense Technology / Guofang Keji Daxue Xuebao, no. 4, Aug. 2024, pp. 169–74. EBSCOhost, https://doi.org/10.11887/j.cn.202404018.

APA

文溢, 陈建军, 梁斌, 池雅庆, 邢海源, & 姚啸虎. (2024). 体硅 CMOS工艺下一种带隙基准的单粒子辐射特性分析. (Chinese). Journal of National University of Defense Technology / Guofang Keji Daxue Xuebao, 4, 169–174. https://doi.org/10.11887/j.cn.202404018

Chicago

文溢, 陈建军, 梁斌, 池雅庆, 邢海源, and 姚啸虎. 2024. “体硅 CMOS工艺下一种带隙基准的单粒子辐射特性分析. (Chinese).” Journal of National University of Defense Technology / Guofang Keji Daxue Xuebao, no. 4 (August): 169–74. doi:10.11887/j.cn.202404018.