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体硅 CMOS工艺下一种带隙基准的单粒子辐射特性分析.

Authors :
文溢
陈建军
梁斌
池雅庆
邢海源
姚啸虎
Source :
Journal of National University of Defense Technology / Guofang Keji Daxue Xuebao; Aug2024, Issue 4, p169-174, 6p
Publication Year :
2024

Abstract

<i>Copyright of Journal of National University of Defense Technology / Guofang Keji Daxue Xuebao is the property of NUDT Press and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)

Details

Language :
Chinese
ISSN :
10012486
Issue :
4
Database :
Complementary Index
Journal :
Journal of National University of Defense Technology / Guofang Keji Daxue Xuebao
Publication Type :
Academic Journal
Accession number :
178791021
Full Text :
https://doi.org/10.11887/j.cn.202404018