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P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display.

Authors :
Luo, Chuanbao
Yao, Jiangbo
Ding, Wei
Zhou, Kai
Liu, Juan
Liu, Nian
Zhan, Xiaojun
Zhang, Xin
Source :
SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, p1431-1433, 3p
Publication Year :
2024

Abstract

The stacked structure thin film transistors (TFT) has caused the widespread attention to achieve high mobility and reliability simultaneously. To ensure the stacked structure TFT application to mass production, it is critical to reduce the number of mask‐count. In this paper, 8‐mask‐count stacked TFT‐array process using the first semiconductor layer overlapped with the source and drain layer directly, which is the first layer on the glass substrate, is studied. By adopting this novel process, the device mobility is 25.4 cm2/Vs, which is more than twice that of conventional top‐gate self‐aligned a‐IGZO device. Besides, the ΔVth under the positive bias stress of 30V and negative bias temperature illumination stress of ‐30V for 1 h is +0.41V and ‐0.13V, respectively, achieving the stability to the level of a‐IGZO TFTs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0097966X
Volume :
55
Issue :
1
Database :
Complementary Index
Journal :
SID Symposium Digest of Technical Papers
Publication Type :
Academic Journal
Accession number :
178715632
Full Text :
https://doi.org/10.1002/sdtp.17818