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50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates.
- Source :
- SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, p689-692, 4p
- Publication Year :
- 2024
-
Abstract
- A low‐temperature technology for fabricating thin‐film transistors (TFTs) is essential for the realization of electronic systems on flexible substrates. Presently reviewed are improved techniques for forming the source/drain regions and reducing the population of channel defects in a metal‐oxide TFT. These have been applied to the construction of different TFT structures, including ones with bottom gate, top gate, and dual gates. The utility of the improved 300‐°C technology has been demonstrated by the realization of a variety of electronic systems, such as a gate‐driver on array for active‐matrix displays, an analog front‐end for acquiring biopotential signals, and an artificial neural network for neuromorphic computing. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 55
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 178715432
- Full Text :
- https://doi.org/10.1002/sdtp.17618