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50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates.

Authors :
Shi, Runxiao
Hu, Yushen
Xie, Xinying
Wong, Man
Source :
SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, p689-692, 4p
Publication Year :
2024

Abstract

A low‐temperature technology for fabricating thin‐film transistors (TFTs) is essential for the realization of electronic systems on flexible substrates. Presently reviewed are improved techniques for forming the source/drain regions and reducing the population of channel defects in a metal‐oxide TFT. These have been applied to the construction of different TFT structures, including ones with bottom gate, top gate, and dual gates. The utility of the improved 300‐°C technology has been demonstrated by the realization of a variety of electronic systems, such as a gate‐driver on array for active‐matrix displays, an analog front‐end for acquiring biopotential signals, and an artificial neural network for neuromorphic computing. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0097966X
Volume :
55
Issue :
1
Database :
Complementary Index
Journal :
SID Symposium Digest of Technical Papers
Publication Type :
Academic Journal
Accession number :
178715432
Full Text :
https://doi.org/10.1002/sdtp.17618