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Effect of Zn2+ substitution on DC electrical resistivity and magnetic properties of Mg0.5−xZnxCo0.5Fe2O4 nano ferrite.

Authors :
Rao, V. Srinivasa
Prasad, V.
Rao, A. Raghavendra
Kumar, K. Anil
Mohan, T. Madhu
Source :
Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 20, p1-13, 13p
Publication Year :
2024

Abstract

Mg<subscript>0.5−x</subscript>Zn<subscript>x</subscript>Co<subscript>0.5</subscript>Fe<subscript>2</subscript>O<subscript>4</subscript> with ferrites were substituted with Zn<superscript>2+</superscript> with concentrations x = 0.0, 0.05, 0.1, 0.15, 0.2, and 0.25 prepared from a sol–gel auto-combustion method. The impact of Zn<superscript>2+</superscript> ion substitution on morphological, structural, DC electrical resistivity, and magnetic characteristics was examined. The diffraction analysis with X-ray reveals that the prepared ferrites are spinel with a single-phase face-centred cubic structure. The cubic crystal structure samples’ values for the crystallite size (42 to 25 nm) and lattice constant (8.386 to 8.425 Å) increased as the concentration increased. Field-effect scanning electron microscopy revealed the ferrite samples’ polycrystalline structures and spherical morphologies. Using FESEM micrographs, the average grain size was between 56.4 and 85.7 nm. Fourier-transform infrared spectroscopy was used to identify two different peaks that emerged at around 585–592 cm<superscript>−1</superscript> and 401–405 cm<superscript>−1</superscript>. These peaks revealed information on the functional groups of the sample chemicals. Temperature-dependent DC electrical resistivity shows the semiconductors’ nature samples. The vibrating sample magnetometer analysis shows that the ferrites are soft ferrimagnetic. The saturation magnetisation was increased (60.45 to 85.04 emu/g), and coercivity was decreased (356.46 to 620.59 Oe) when the concentration was increased. The study unveiled tuned values of the physical characteristics, thereby highlighting potential applications in recent technologies. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
20
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
178550970
Full Text :
https://doi.org/10.1007/s10854-024-13166-3