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Low charge noise quantum dots with industrial CMOS manufacturing.
- Source :
- NPJ Quantum Information; 7/19/2024, Vol. 10 Issue 1, p1-9, 9p
- Publication Year :
- 2024
-
Abstract
- Silicon spin qubits are promising candidates for scalable quantum computers, due to their coherence and compatibility with CMOS technology. Advanced industrial processes ensure wafer-scale uniformity and high device yield, but traditional transistor processes cannot be directly transferred to qubit structures. To leverage the micro-electronics industry expertise, we customize a 300 mm wafer fabrication line for silicon MOS qubit integration. With careful optimization of the gate stack, we report uniform quantum dot operation at the Si/SiO<subscript>2</subscript> interface at mK temperature. We measure a record-low average noise with a value of 0.61 μ eVH z − 0.5 at 1 Hz and even below 0.1 μ eVH z − 0.5 for some operating conditions. Statistical analysis of the charge noise measurements show that the noise source can be described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured spin qubits as a mature platform towards scalable high-fidelity qubits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20566387
- Volume :
- 10
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- NPJ Quantum Information
- Publication Type :
- Academic Journal
- Accession number :
- 178527878
- Full Text :
- https://doi.org/10.1038/s41534-024-00864-3