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Electrical and dielectric properties of optimized cubic structure with promising morphological texture in Ce0.8Zr0.2O2.
- Source :
- Bulletin of Materials Science; Sep2024, Vol. 47 Issue 3, p1-9, 9p
- Publication Year :
- 2024
-
Abstract
- Influence of structure and microstructure on the dielectric properties of single-phase solid solution of ZrO<subscript>2</subscript>–CeO<subscript>2</subscript> system with 80% CeO<subscript>2</subscript> has been investigated. Highly dense polycrystalline Ce<subscript>0.8</subscript>Zr<subscript>0.2</subscript>O<subscript>2</subscript> ceramic was synthesized through solid-state reaction route, and its cubic structure was verified through X-ray diffraction and Raman spectroscopy techniques. The compact grain morphology was validated through FESEM with grain size of ~9 μm. Dielectric properties of the Ce<subscript>0.8</subscript>Zr<subscript>0.2</subscript>O<subscript>2</subscript> were probed by applying ac electric field of different frequencies at variable temperatures. The measured dielectric constant of Ce<subscript>0.8</subscript>Zr<subscript>0.2</subscript>O<subscript>2</subscript> in the presence of applied ac field of 2 kHz frequency at 300 K is ~1819, is reduced to 27 with an increase in the frequency up to 2 MHz, which is a comparatively high dielectric constant than binary oxides. The high packing fraction of cubic structure of ZrO<subscript>2</subscript>–CeO<subscript>2</subscript> with 80% CeO<subscript>2</subscript> showed a small dielectric loss ( tan δ ). The interfacial polarization effect was confirmed by low-frequency dielectric dispersion in ε ′ ′ and ε r . The large conductivity coupled with a relaxation phenomenon at higher temperatures is attributed to the shift from extended hopping to localized ionic transport. Ce<subscript>0.8</subscript>Zr<subscript>0.2</subscript>O<subscript>2</subscript> showed a negative coefficient of resistance validated through increasing ac conductivity with temperature. A high dielectric constant with small dielectric tangent loss achieved in cubic structured sample established its application in high-performance metal oxide semiconductor field effect transistor (MOSFET) devices along with the formation of advanced solid-electrolytes for solid oxide fuel cells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02504707
- Volume :
- 47
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Bulletin of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 178527144
- Full Text :
- https://doi.org/10.1007/s12034-024-03244-x