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Strain-engineered rippling at the bilayer-MoS2 interface identified by advanced atomic force microscopy.
- Source :
- Frontiers of Physics; Dec2024, Vol. 19 Issue 6, p1-9, 9p
- Publication Year :
- 2024
-
Abstract
- The van der Waals interface structures and behaviors are of great importance in determining the physical properties of two-dimensional atomic crystals and their heterostructures. The delicate interfacial properties are sensitively dependent on the mechanical behaviors of atomically thin films under external strain. Here, we investigated the strain-engineered rippling structures at the CVD-grown bilayer-MoS<subscript>2</subscript> interface with advanced atomic force microscopy (AFM). The in-plane compressive strain is sequentially introduced into the 1L-substrate and 2L-1L interface of bilayer-MoS<subscript>2</subscript> flakes via a fast-cooling process. The thermal strain-engineered rippling structures were directly visualized at the central 2H- and 3R-MoS<subscript>2</subscript> bilayer regions with friction force microscopy (FFM) and bimodal AFM techniques. These rippling structures can be further artificially manipulated into the beating-like rippling features and fully erased via the contact mode AFM scanning. Our results shed lights on the strain-engineered interfacial structures of two-dimensional materials and also inspire the further investigation on the interface engineering of their electronic and optical properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20950462
- Volume :
- 19
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Frontiers of Physics
- Publication Type :
- Academic Journal
- Accession number :
- 178415231
- Full Text :
- https://doi.org/10.1007/s11467-024-1409-4