Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect.

MLA

Armakavicius, Nerijus, et al. “Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect.” Materials (1996-1944), vol. 17, no. 13, July 2024, p. 3343. EBSCOhost, https://doi.org/10.3390/ma17133343.

APA

Armakavicius, N., Kühne, P., Papamichail, A., Zhang, H., Knight, S., Persson, A., Stanishev, V., Chen, J.-T., Paskov, P., Schubert, M., & Darakchieva, V. (2024). Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect. Materials (1996-1944), 17(13), 3343. https://doi.org/10.3390/ma17133343

Chicago

Armakavicius, Nerijus, Philipp Kühne, Alexis Papamichail, Hengfang Zhang, Sean Knight, Axel Persson, Vallery Stanishev, et al. 2024. “Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect.” Materials (1996-1944) 17 (13): 3343. doi:10.3390/ma17133343.