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Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 8/4/2005, Vol. 41 Issue 16, p927-928, 2p
- Publication Year :
- 2005
-
Abstract
- The reliability of Mo-based Schottky contact for an AlGaN/GaN HEMT after a thermal storage test is reported. Electrical and chemical analyses demonstrate the stability of Mo/Au gate for a GaN HEMT after a 2000 h ageing test at temperatures up to 340°C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 41
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 17830471
- Full Text :
- https://doi.org/10.1049/el:20051475