Impact ionisation in strained SiGe pMOSFETs.

Authors :: Nicholas, G.
Dobbie, A.
Grasby, T. J.
Whall, T. E.
Parker, E. H. C.
Source :: Electronics Letters (Institution of Engineering & Technology); 8/4/2005, Vol. 41 Issue 16, p925-926, 2p
Publication Year :: 2005
Abstract: Impact ionisation in compressively strained Si<subscript>0.64</subscript>Ge<subscript>0.36</subscript> pMOSFETs is investigated. Despite the smaller bandgap and higher hole mobility, impact ionisation is found to be reduced in strained SiGe. This is attributed to the reduced density of states in strained SiGe, brought about by strain-induced band splitting, limiting the opportunities for scattering. [ABSTRACT FROM AUTHOR]