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Lanthanum-Doped Zinc Oxide Thin Films: A Study on Optoelectronic Properties †.

Authors :
Tabriz, Ayesha
Shahzad, Nadia
Nadeem, Saad
Mehmood, Sana
Iqbal, Naseem
Ali, Ghulam
Shahzad, Muhammad Imran
Source :
Materials Proceedings; 2024, Vol. 17, p9, 5p
Publication Year :
2024

Abstract

To enhance the overall performance of perovskite solar cells, the quality of the electron transport layer (ETL) held significant importance. Zinc oxide (ZnO) emerged as highly promising due to its exceptional optical and electrical characteristics. This study included the incorporation of lanthanum (La III) into the ZnO lattice to improve its optoelectronic properties. All the produced thin films were crystallized at low annealing temperatures. Through careful analysis, it was observed that the inclusion of doping with 4% La (III) resulted in increased crystallinity, leading to low surface roughness. Additionally, this doping strategy facilitated enhanced mobility of charge carriers and conductivity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
26734605
Volume :
17
Database :
Complementary Index
Journal :
Materials Proceedings
Publication Type :
Conference
Accession number :
178214618
Full Text :
https://doi.org/10.3390/materproc2024017009