Cite
Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.
MLA
Goyal, Priyanshi, and Harsupreet Kaur. “Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.” Journal of Electronic Materials, vol. 53, no. 8, Aug. 2024, pp. 4544–52. EBSCOhost, https://doi.org/10.1007/s11664-024-11225-3.
APA
Goyal, P., & Kaur, H. (2024). Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications. Journal of Electronic Materials, 53(8), 4544–4552. https://doi.org/10.1007/s11664-024-11225-3
Chicago
Goyal, Priyanshi, and Harsupreet Kaur. 2024. “Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.” Journal of Electronic Materials 53 (8): 4544–52. doi:10.1007/s11664-024-11225-3.