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Synthesis and Characterization of WO3 Nanostructures by the Solvothermal Method for Electrochromic Applications.
- Source :
- Journal of Electronic Materials; Aug2024, Vol. 53 Issue 8, p4564-4574, 11p
- Publication Year :
- 2024
-
Abstract
- In this study, a tungsten trioxide (WO<subscript>3</subscript>) thin film was deposited by direct current (DC) sputtering onto a fluorine-doped tin oxide (FTO) substrate as the seed layer at an oxygen partial pressure of 8 × 10<superscript>−4</superscript> mbar. A simple solvothermal method involving tungsten hexacarbonyl (W(CO)<subscript>6</subscript>), ethanol (C<subscript>2</subscript>H<subscript>5</subscript>OH), and hydrochloric acid (HCl) was used to synthesize vertically stacked nanoscale WO<subscript>3</subscript> hierarchical structures on WO<subscript>3</subscript> seed-layered FTO. After the deposition process, the FTO samples with nanostructures were subjected to annealing in air at 400°C for 4 h. After annealing, the surface morphology, structural characteristics, and optical and electrochromic properties of the grown nanostructures were investigated using scanning electron microscopy (SEM), x-ray diffraction (XRD), Raman spectroscopy, UV–visible spectroscopy, and electrochemical analysis. From the XRD analysis, all the diffraction patterns were ascribed to a monoclinic phase. The SEM analysis showed that films grown with 5 μL HCl had a nanoflower structure compared to the films grown with 0 μL HCl and 20 μL HCl. The nanoflower-structured films showed a higher cathodic peak current (−2.22 mA), diffusion coefficient (5.43 × 10<superscript>−9</superscript> cm<superscript>2</superscript>/s), and coloration efficiency (23.6 cm<superscript>2</superscript>/C). The increased electrochromic characteristics were attributed to the nanostructured films, which enhanced the diffusion of H<superscript>+</superscript> ions by providing a large surface area during the charge transfer process. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 53
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 178208856
- Full Text :
- https://doi.org/10.1007/s11664-024-11037-5