P‐1.23: High‐Performance Dual‐Gate a‐IGZO/a‐IZO Thin‐Film Transistors.

To effectively enhance the mobility without other degradations, such as much negative threshold voltage, this work fabricated the a‐IGZO/a‐IZO heterojunction‐channel TFTs with dual‐gate structure. The fabricated a‐IZO/a‐IGZO with thicker a‐IGZO TFT shows high performance, including high mobility of 54.6 cm2 /Vs, small subthreshold swing of 0.26 V/dec, and good stability under PBTS and NBTIS. [ABSTRACT FROM AUTHOR]