51‐1: Invited Paper: Optimizing Photonic Annealing Technique for Full‐Solution‐Processed Oxide Thin Film Transistor.

This article discusses the optimization of the photonic annealing technique for full-solution-processed oxide thin film transistors (TFTs). The use of solution techniques for TFTs has gained attention due to its low cost, transparency, and high mobility. However, previous attempts at full-solution functional layers for oxide TFTs have resulted in poor performance. To address this, the article proposes the use of photolithographic patterned technique to fabricate TFT arrays with channel lengths of less than 10 μm. Additionally, the article explores the use of photonic annealing processes, such as ultraviolet (UV) irradiation or rapid thermal annealing (RTA)-assisted laser annealing (LA) technique, to improve the stability of full-solution-processed TFTs. The results show promising potential for the photonic annealing process in enhancing the stability of TFTs. [Extracted from the article]