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High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices.
- Source :
- Advanced Materials; 6/26/2024, Vol. 36 Issue 26, p1-11, 11p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 36
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 178095479
- Full Text :
- https://doi.org/10.1002/adma.202312747