Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN.

MLA

Wan, Hsiao-Hsuan, et al. “Determination of Band Offsets at the Interfaces of NiO, SiO2, Al2O3, and ITO with AlN.” Journal of Applied Physics, vol. 135, no. 23, June 2024, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0214291.

APA

Wan, H.-H., Li, J.-S., Chiang, C.-C., Xia, X., Hays, D. C., Al-Mamun, N. S., Haque, A., Ren, F., & Pearton, S. J. (2024). Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN. Journal of Applied Physics, 135(23), 1–7. https://doi.org/10.1063/5.0214291

Chicago

Wan, Hsiao-Hsuan, Jian-Sian Li, Chiao-Ching Chiang, Xinyi Xia, David C. Hays, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, and Stephen J. Pearton. 2024. “Determination of Band Offsets at the Interfaces of NiO, SiO2, Al2O3, and ITO with AlN.” Journal of Applied Physics 135 (23): 1–7. doi:10.1063/5.0214291.