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High-temperature concomitant metal-insulator and spin-reorientation transitions in a compressed nodal-line ferrimagnet Mn3Si2Te6.
- Source :
- Nature Communications; 6/20/2024, Vol. 15 Issue 1, p1-8, 8p
- Publication Year :
- 2024
-
Abstract
- Symmetry-protected band degeneracy, coupled with a magnetic order, is the key to realizing novel magnetoelectric phenomena in topological magnets. While the spin-polarized nodal states have been identified to introduce extremely-sensitive electronic responses to the magnetic states, their possible role in determining magnetic ground states has remained elusive. Here, taking external pressure as a control knob, we show that a metal-insulator transition, a spin-reorientation transition, and a structural modification occur concomitantly when the nodal-line state crosses the Fermi level in a ferrimagnetic semiconductor Mn<subscript>3</subscript>Si<subscript>2</subscript>Te<subscript>6</subscript>. These unique pressure-driven magnetic and electronic transitions, associated with the dome-shaped T<subscript>c</subscript> variation up to nearly room temperature, originate from the interplay between the spin-orbit coupling of the nodal-line state and magnetic frustration of localized spins. Our findings highlight that the nodal-line states, isolated from other trivial states, can facilitate strongly tunable magnetic properties in topological magnets. The coupling between topological electronic properties and magnetic order offers a promising route for magnetoelectric control with great potential for both applications and fundamental physics. Here, Susilo et al demonstrate the rich tunability of magnetic properties in nodal-line magnetic semiconductor Mn<subscript>3</subscript>Si<subscript>2</subscript>Te<subscript>6</subscript> using pressure as control knob. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 15
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- 177993082
- Full Text :
- https://doi.org/10.1038/s41467-024-48432-9