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Emergent flat band and topological Kondo semimetal driven by orbital-selective correlations.

Authors :
Chen, Lei
Xie, Fang
Sur, Shouvik
Hu, Haoyu
Paschen, Silke
Cano, Jennifer
Si, Qimiao
Source :
Nature Communications; 6/19/2024, Vol. 15 Issue 1, p1-7, 7p
Publication Year :
2024

Abstract

Flat electronic bands are expected to show proportionally enhanced electron correlations, which may generate a plethora of novel quantum phases and unusual low-energy excitations. They are increasingly being pursued in d-electron-based systems with crystalline lattices that feature destructive electronic interference, where they are often topological. Such flat bands, though, are generically located far away from the Fermi energy, which limits their capacity to partake in the low-energy physics. Here we show that electron correlations produce emergent flat bands that are pinned to the Fermi energy. We demonstrate this effect within a Hubbard model, in the regime described by Wannier orbitals where an effective Kondo description arises through orbital-selective Mott correlations. Moreover, the correlation effect cooperates with symmetry constraints to produce a topological Kondo semimetal. Our results motivate a novel design principle for Weyl Kondo semimetals in a new setting, viz. d-electron-based materials on suitable crystal lattices, and uncover interconnections among seemingly disparate systems that may inspire fresh understandings and realizations of correlated topological effects in quantum materials and beyond. Flat electronic bands can give rise to correlation-driven phases but for this, they need to be tuned to the Fermi level. Here the authors predict flat bands pinned at the Fermi level due to orbital-selective interactions and discuss implications for the design of topological Kondo semimetal in d-electron systems. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20411723
Volume :
15
Issue :
1
Database :
Complementary Index
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
177992032
Full Text :
https://doi.org/10.1038/s41467-024-49306-w