An antiferromagnetic spin phase change memory.

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T. Antiferromagnets have a variety of attractive features such as rapid operation, lack of stray fields, and insensitivity to external perturbations, that make an exciting prospect for memory and computing applications. Unfortunately, readout of the antiferromagnetic state is challenging. Here, Yan, Mao and coauthors demonstrate an antiferromagnet that can be switched between antiferromagnetic phases via piezoelectric strain with a large difference in the resistance between the two antiferromagnetic phases. [ABSTRACT FROM AUTHOR]