Back to Search
Start Over
A Bi2C Photodetector Based on the Spin-Dependent Photogalvanic Effect.
- Source :
- Journal of Electronic Materials; Jul2024, Vol. 53 Issue 7, p3702-3712, 11p
- Publication Year :
- 2024
-
Abstract
- Nowadays there is considerable interest in the photogalvanic effect in low-dimensional devices. In this work, we built a two-dimensional Bi<subscript>2</subscript>C-based photodetector and explored the spin-dependent photogalvanic effect under linearly polarized light and zero-bias conditions which can produce experimentally observable photoelectron flow. It was discovered that by introducing vacancies and substitution-doping into the Bi<subscript>2</subscript>C photodetector, the photogalvanic effect could be enhanced by 10–100 times that of a pristine photodetector, which is sufficient to be detected in experiments. Moreover, due to strong spin–orbit interactions, the Bi<subscript>2</subscript>C photodetector can produce very high spin polarization, even 100% full spin polarization, and pure spin current at a specific incident angle and photon energy, for example in the Bi1-vacancy Bi<subscript>2</subscript>C photodetector. In addition, the photon energy of incident light can regulate the produced spin photocurrent, which shows considerable anisotropy. Our results highlight the potential of the Bi<subscript>2</subscript>C photodetector as a versatile device in optoelectronics and spintronics applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 53
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 177797330
- Full Text :
- https://doi.org/10.1007/s11664-024-11155-0