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A Bi2C Photodetector Based on the Spin-Dependent Photogalvanic Effect.

Authors :
Lin, Jian
Liang, Guangyao
Fu, Xi
Liao, Wenhu
Li, Xiaowu
Gao, Haixia
Source :
Journal of Electronic Materials; Jul2024, Vol. 53 Issue 7, p3702-3712, 11p
Publication Year :
2024

Abstract

Nowadays there is considerable interest in the photogalvanic effect in low-dimensional devices. In this work, we built a two-dimensional Bi<subscript>2</subscript>C-based photodetector and explored the spin-dependent photogalvanic effect under linearly polarized light and zero-bias conditions which can produce experimentally observable photoelectron flow. It was discovered that by introducing vacancies and substitution-doping into the Bi<subscript>2</subscript>C photodetector, the photogalvanic effect could be enhanced by 10–100 times that of a pristine photodetector, which is sufficient to be detected in experiments. Moreover, due to strong spin–orbit interactions, the Bi<subscript>2</subscript>C photodetector can produce very high spin polarization, even 100% full spin polarization, and pure spin current at a specific incident angle and photon energy, for example in the Bi1-vacancy Bi<subscript>2</subscript>C photodetector. In addition, the photon energy of incident light can regulate the produced spin photocurrent, which shows considerable anisotropy. Our results highlight the potential of the Bi<subscript>2</subscript>C photodetector as a versatile device in optoelectronics and spintronics applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
53
Issue :
7
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
177797330
Full Text :
https://doi.org/10.1007/s11664-024-11155-0