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Advancing Accuracy in Perovskite Tandem Solar Cell Efficiency via Transfer Matrix-Based Realistic Device Simulations.

Authors :
Shrivastav, Nikhil
Madan, Jaya
Pandey, Rahul
Source :
Journal of Electronic Materials; Jul2024, Vol. 53 Issue 7, p4214-4223, 10p
Publication Year :
2024

Abstract

Numerous researchers have dedicated efforts toward enhancing the efficiency of solar cells, particularly through the utilization of multi-junction or tandem solar cell configurations. However, a common approach employed by many researchers involves the use of the standard absorption formula (SAF) to determine the transmitted spectrum from the top cell to illuminate the bottom cells. The SAF method relies on conventional absorption calculations, neglecting reflection, refraction, and parasitic absorption losses. In this study, the transfer matrix (TRM) method, which accounts for reflection and refraction losses and an interference effect, is reported for the accurate calculation of a filtered spectrum. A comparative analysis between the SAF and TRM approaches reveal that the TRM technique provides a more accurate representation of the transmitted spectrum, particularly when considering reflection, refraction, and parasitic absorption losses. The primary aim of this research is to precisely predict the efficiency of tandem configurations by integrating multiple low-bandgap semiconductor bottom cells (BCs) with a top cell (TC) based on high-bandgap perovskite (PVK). Furthermore, the optimization of current matching is achieved by adjusting the thicknesses of the top absorber layer (TAL) and bottom absorber layer (BAL) based on the obtained filtered spectra. Tandem devices optimized using the TRM approach exhibit superior performance, achieving efficiencies of 28.72% (PVK/c-Si), 27.88% (PVK/CIGS), and 29.99% (PVK/PVK). This comparative investigation underscores the importance of considering reflection and refraction losses in tandem solar cell design and highlights the effectiveness of the TRM technique in enhancing device performance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
53
Issue :
7
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
177797322
Full Text :
https://doi.org/10.1007/s11664-024-11141-6