Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.

MLA

Venkatesan, R. S., et al. “Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.” Journal of Electronic Materials, vol. 53, no. 7, July 2024, pp. 3887–900. EBSCOhost, https://doi.org/10.1007/s11664-024-11100-1.

APA

Venkatesan, R. S., Manickam, R., Duraipandi, B., & Sugathan, K. K. (2024). Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications. Journal of Electronic Materials, 53(7), 3887–3900. https://doi.org/10.1007/s11664-024-11100-1

Chicago

Venkatesan, R. S., Rajeswari Manickam, Brindha Duraipandi, and Krishnapriya Kottakkal Sugathan. 2024. “Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.” Journal of Electronic Materials 53 (7): 3887–3900. doi:10.1007/s11664-024-11100-1.