Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2.

MLA

Kunioka, Haruno, et al. “Investigation of Group 13 Elements as Potential Candidates for P-Type Dopants in the Narrow-Gap Thermoelectric Semiconductor α-SrSi2.” Journal of Materials Science, vol. 59, no. 18, May 2024, pp. 7840–53. EBSCOhost, https://doi.org/10.1007/s10853-024-09653-x.

APA

Kunioka, H., Shiojiri, D., Takahashi, S., Hiratsuka, K., Yamaguchi, M., Hirayama, N., Imai, Y., Imai, M., & Iida, T. (2024). Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2. Journal of Materials Science, 59(18), 7840–7853. https://doi.org/10.1007/s10853-024-09653-x

Chicago

Kunioka, Haruno, Daishi Shiojiri, Shinta Takahashi, Kota Hiratsuka, Masato Yamaguchi, Naomi Hirayama, Yoji Imai, Motoharu Imai, and Tsutomu Iida. 2024. “Investigation of Group 13 Elements as Potential Candidates for P-Type Dopants in the Narrow-Gap Thermoelectric Semiconductor α-SrSi2.” Journal of Materials Science 59 (18): 7840–53. doi:10.1007/s10853-024-09653-x.