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Experimental Investigations on the Electrical Conductivity and Complex Dielectric Permittivity of Zn x Mn 1−x Fe 2 O 4 (x = 0 and 0.4) Ferrites in a Low-Frequency Field.
- Source :
- Crystals (2073-4352); May2024, Vol. 14 Issue 5, p437, 22p
- Publication Year :
- 2024
-
Abstract
- Two samples of Zn<subscript>x</subscript>Mn<subscript>1−x</subscript>Fe<subscript>2</subscript>O<subscript>4</subscript> (x = 0, sample A; and x = 0.4, sample B) were synthesized by the hydrothermal method. From complex impedance measurements in the range 100 Hz–2 MHz and for temperatures T between 30 and 130 °C, the barrier energy between localized states ΔE<subscript>relax</subscript> was determined for the first time in these samples. For sample B, a single value of ΔE<subscript>relax</subscript> was highlighted (0.221 eV), whilst, for sample A, two values were obtained (0.012 eV and 0.283 eV, below 85 °C and above 85 °C, respectively), associated with two zones of different conductivities. Using the Mott's VRH model and the CBH model, we determined for the first time both the bandgap energy barrier (W<subscript>m</subscript>) and the hopping (crossover) frequency (ω<subscript>h</subscript>), at various temperatures. The results show that, for sample A, W<subscript>m</subscript> has a maximum equal to 0.72 eV at a temperature between 70 and 80 °C, whilst, for sample B, W<subscript>m</subscript> has a minimum equal to 0.28 eV at a temperature of 60 °C, the results being in good agreement with the temperature dependence of the static conductivity σ<subscript>DC</subscript>(T) of the samples. By evaluating σ<subscript>DC</subscript> and eliminating the conduction losses, we identified, using a novel approach, a dielectric relaxation phenomenon in the samples, characterized by the activation energy E<subscript>A,rel</subscript>. At various temperatures, we determined E<subscript>A,rel</subscript>, which ranged from 0.195 eV to 0.77 eV. These results are important, as understanding these electrical properties is crucial to various applications, especially in technologies where temperature variation is significant. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 14
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Crystals (2073-4352)
- Publication Type :
- Academic Journal
- Accession number :
- 177493097
- Full Text :
- https://doi.org/10.3390/cryst14050437