Impact of Carrier Gas Flow Rate on the Synthesis of Monolayer WSe 2 via Hydrogen-Assisted Chemical Vapor Deposition.

Transition metal dichalcogenides (TMDs), particularly monolayer TMDs with direct bandgap properties, are key to advancing optoelectronic device technology. WSe₂ stands out due to its adjustable carrier transport, making it a prime candidate for optoelectronic applications. This study explores monolayer WSe₂ synthesis via H₂-assisted CVD, focusing on how carrier gas flow rate affects WSe₂ quality. A comprehensive characterization of monolayer WSe₂ was conducted using OM (optical microscope), Raman spectroscopy, PL spectroscopy, AFM, SEM, XPS, HRTEM, and XRD. It was found that H₂ incorporation and flow rate critically influence WSe₂'s growth and structural integrity, with low flow rates favoring precursor concentration for product formation and high rates causing disintegration of existing structures. This research accentuates the significance of fine-tuning the carrier gas flow rate for optimizing monolayer WSe₂ synthesis, offering insights for fabricating monolayer TMDs like WS₂, MoSe₂, and MoS₂, and facilitating their broader integration into optoelectronic devices. [ABSTRACT FROM AUTHOR]