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Analysis and Mitigation of Negative Differential Resistance Effects with Hetero-gate Dielectric Layer in Negative-capacitance Field-effect Transistors.
- Source :
- Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials; Mar2024, Vol. 54 Issue 1, p65-73, 9p
- Publication Year :
- 2024
-
Abstract
- <i>Copyright of Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials is the property of MIDEM Society and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
Details
- Language :
- English
- ISSN :
- 03529045
- Volume :
- 54
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials
- Publication Type :
- Academic Journal
- Accession number :
- 177381941
- Full Text :
- https://doi.org/10.33180/InfMIDEM2024.106