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Analysis and Mitigation of Negative Differential Resistance Effects with Hetero-gate Dielectric Layer in Negative-capacitance Field-effect Transistors.

Authors :
Honglei Huo
Weifeng Lü
Xinfeng Zheng
Yubin Wang
Shuaiwei Zhao
Source :
Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials; Mar2024, Vol. 54 Issue 1, p65-73, 9p
Publication Year :
2024

Abstract

<i>Copyright of Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials is the property of MIDEM Society and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)

Details

Language :
English
ISSN :
03529045
Volume :
54
Issue :
1
Database :
Complementary Index
Journal :
Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials
Publication Type :
Academic Journal
Accession number :
177381941
Full Text :
https://doi.org/10.33180/InfMIDEM2024.106