Effect of GaSb Compound on Silicon Bandgap Energy.

In this work, the bandgap energy of Si samples doped with impurity atoms of elements Ga (AIII) and Sb (BV) by the diffusion method and without impurity atoms was studied. It is known that the bandgap energies of GaSb and Si semiconductors at room temperature are 0.726 and 1.12 eV, respectively. According to the results of the study, it was found that the band gap energies of Ga and Sb-doped and non-doped Si samples are 1.114 and 1.119 eV, respectively. When the samples were further annealed at a temperature of 600 °C, it was observed that the bandgap energy of the samples doped with Ga and Sb decreased to 1.10 eV. [ABSTRACT FROM AUTHOR]