Si-doped (AlGa)2O3 growth on a -, m - and r -plane α -Al2O3 substrates by molecular beam epitaxy.

We reported the growth of (AlGa)₂O₃ layers on (11 2 ¯ 0), (10 1 ¯ 0), and (10 1 ¯ 2) α -Al₂O₃ substrates using MBE, and the electrical characterization of Si-doped (AlGa)₂O₃ layers. The Ga₂O₃ layers grown on (10 1 ¯ 0) and (10 1 ¯ 2) α -Al₂O₃ were α -phase single crystals, while the Ga₂O₃ layer grown on (11 2 ¯ 0) α -Al₂O₃ consisted of (11 2 ¯ 0) α -Ga₂O₃ and ( 2 ¯ 01) β -Ga₂O₃. The Al composition of the (11 2 ¯ 0) and (10 1 ¯ 0) (AlGa)₂O₃ layers was controlled by varying the Al flux. The Si-doped (10 1 ¯ 0) α -(Al _x Ga_{1- x} )₂O₃ layers with x = 0–0.41 were electrically conducting. [ABSTRACT FROM AUTHOR]