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Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films.
- Source :
- Physica Status Solidi - Rapid Research Letters; May2024, Vol. 18 Issue 5, p1-5, 5p
- Publication Year :
- 2024
-
Abstract
- Terbium (Tb)‐doped Ga2O3 films are grown on Si substrates by pulsed laser deposition at a substrate temperature of 500 °C. The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb‐doped Ga2O3/Si light‐emitting diodes (LEDs) correspond to the 5D4–7F6, 5D4–7F5, 5D4–7F4, and 5D4–7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb‐doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- TERBIUM
PULSED laser deposition
ELECTROLUMINESCENCE
LIGHT emitting diodes
Subjects
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 18
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 177040426
- Full Text :
- https://doi.org/10.1002/pssr.202300481