Computational modeling of a surfatron mode microwave plasma in NH3/N2 for remote radical generation in a silicon native oxide cleaning process.

Plasma-produced N_xH_y radicals facilitate the removal of native oxide layers in a semiconductor wafer surface. A remote microwave excited plasma with a NH₃–N₂ feed gas is used commonly to produce the active radicals. We perform a three-dimensional modeling of a microwave excited plasma operating in a surfatron mode. The device consists of a rectangular waveguide intersecting a quartz tube through which the feed gas flows. We discuss the propagation of a polarized 2.45 GHz microwave from the waveguide into the quartz tube where power is deposited into the plasma. The plasma–wave interaction is found to be highly three dimensional, with a propagating surface mode of the wave established along the dielectric tube plasma interface. Significant heating occurs on the side of the tube that directly faces the incident wave. As the flow carries the plasma-produced species down the tube, species radial profiles become increasingly diffusion controlled and axisymmetric. The dominant radicals that exit the tube are H₂ and NH₂, with nearly complete conversion of the feed gases to product species. The gas temperature rises above this inlet feed gas temperature and increases with increasing wave power. However, the gas temperature increase is not consequential to the overall radical yield from the plasma. The parametric study with changing pressure and input power illustrates the role of specific chemical reactions in the overall remote plasma process. [ABSTRACT FROM AUTHOR]