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2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires.

Authors :
Rovaris, Fabrizio
Peeters, Wouter H. J.
Marzegalli, Anna
Glas, Frank
Vincent, Laetitia
Miglio, Leo
Bakkers, Erik P. A. M.
Verheijen, Marcel A.
Scalise, Emilio
Source :
ACS Applied Nano Materials; 4/26/2024, Vol. 7 Issue 8, p9396-9402, 7p
Publication Year :
2024

Abstract

The nucleation mechanism of ubiquitous basal stacking faults observed in hexagonal Si/Ge nanowires is still an enigma. These defects may hinder the exploitation of hexagonal Si/Ge for nano-optoelectronics and quantum technologies. In this work, the formation of the I<subscript>3</subscript> basal stacking faults is investigated at the atomistic level, and results are compared to the experimental findings. We propose that these extended defects are caused by dislocation lines elongated in ⟨112̅0⟩ directions, which in turn arise from glide terminations of the step edges when two growing fronts run into each other. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
25740970
Volume :
7
Issue :
8
Database :
Complementary Index
Journal :
ACS Applied Nano Materials
Publication Type :
Academic Journal
Accession number :
176897977
Full Text :
https://doi.org/10.1021/acsanm.4c00835