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Photo-physical properties of solution-processed CuFe2O4 thin films towards all oxide TiO2/CuFe2O4 heterojunction photovoltaics.

Authors :
Garg, Parul
Bera, Ashok
Source :
Journal of Materials Science: Materials in Electronics; Apr2024, Vol. 35 Issue 12, p1-9, 9p
Publication Year :
2024

Abstract

Finding low-cost, solution-processed, stable, and environmentally friendly materials that absorb visible light is the main challenge in designing optoelectronic devices such as photovoltaic (PV) cells. Spinel-structured p-type CuFe<subscript>2</subscript>O<subscript>4</subscript> (CFO) is an environmentally stable, non-toxic complex oxide known for its superparamagnetic properties. Having a narrow bandgap with a high-absorption coefficient, it has been used for photocatalytic activities and photo-electrochemical water splitting. Here, we explore the feasibility of solution-processed CFO thin film as an absorber layer in n-p heterojunction PV cells. Spin-coated CFO thin film on a fluorine-doped tin oxide (FTO) coated glass substrate shows a single-phase spinel tetragonal crystal structure with an optical band gap of around 2 eV and a high absorption coefficient of 10<superscript>5</superscript> cm<superscript>−1</superscript>. A steady rise under illumination in the transient photocurrent response of the CFO films confirms its visible light sensitivity. The solution-processed all oxide TiO<subscript>2</subscript>/CFO-based n-p heterojunction shows typical diode-like characteristics, and under 1 sun illumination, it shows a photovoltage over 430 mV and photocurrent density of 0.432 mA cm<superscript>−2</superscript>. Hence, the studied optoelectronic properties of CFO thin films indicate the possibility of CFO as an active material in PV cells that further strengthens its multifunctionality. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
12
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
176727895
Full Text :
https://doi.org/10.1007/s10854-024-12582-9