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Growth and Luminescence Properties of Cs4 EuI6 :Sm Near-Infrared Scintillation Crystals.

Authors :
YANG Jianghao
HUANG Xinshuai
LAN Chenhui
WEI Qinhua
QIN Laishun
Source :
Journal of Synthetic Crystals; Apr2024, Vol. 53 Issue 4, p627-633, 7p
Publication Year :
2024

Abstract

With the rapid development of silicon-based light detectors with high detection efficiency and long-wavelength sensitivity, the development of near-infrared scintillation crystals has become a hotspot. Especially, the Sm<superscript>2+</superscript> doped europium-based halide crystals exhibit excellent near-infrared luminescence properties. In this paper, Cs<subscript>4</subscript> EuI<subscript>6</subscript>: Sm near-infrared scintillation crystals with a size of cm-level were successfully prepared by Bridgman method. The composition and structure were discussed by XRD, XPS and ICP-OES methods, indicating that the Sm<superscript>2+</superscript> was introduced and has no obvious effect on the crystal structure of the matrix. Under ultraviolet and X-ray excitation, the crystal has two luminescence centers (Eu<superscript>2+</superscript> and Sm<superscript>2+</superscript>), and the emission peaks are located at 450 and 840 nm, respectively, corresponding to the 5d→4f luminescence of Eu<superscript>2+</superscript> and Sm<superscript>2+</superscript>. The decay time of Eu<superscript>2+</superscript> and Sm<superscript>2+</superscript> is at the level of microsecond under ultraviolet excitation. The results show that the emission wavelength gradually varies from blue to near infrared as Sm<superscript>2+</superscript> doping concentration increased. The effects of Sm<superscript>2+</superscript> concentration on the luminescence properties, Eu<superscript>2+</superscript> -Sm<superscript>2+</superscript> energy transfer and decay time of the crystals were also studied, which means that the luminescence properties can be tuned by adjusting the Sm<superscript>2+</superscript> doping concentration. [ABSTRACT FROM AUTHOR]

Details

Language :
Chinese
ISSN :
1000985X
Volume :
53
Issue :
4
Database :
Complementary Index
Journal :
Journal of Synthetic Crystals
Publication Type :
Academic Journal
Accession number :
176638120