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Effect of doping ion concentration on the microstructure and dielectric properties of (Na1/2Eu1/2)xCa1−xCu3Ti4O12 ceramics.

Authors :
Yuan, Longfei
Xia, Yongguo
Zhang, Ting
Han, Dandan
Fang, Cheng
Zuo, Die
Source :
Journal of Materials Science: Materials in Electronics; Apr2024, Vol. 35 Issue 11, p1-14, 14p
Publication Year :
2024

Abstract

A series of single phase (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>x</subscript>Ca<subscript>1−x</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> (x = 0, 0.01, 0.05, 0.1, 0.2, 0.3, 0.35, 0.4 and 0.45) ceramics with different doping amounts were successfully prepared by high temperature solid-state reaction method. The microstructure, ion valence, and dielectric properties of the ceramics were systematically studied. The results indicated that with the increase of Na<superscript>+</superscript> and Eu<superscript>3+</superscript> ions concentration in (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>x</subscript>Ca<subscript>1−x</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> ceramics, Na and Eu elements accumulated at the grain boundaries of ceramics, thereby increasing the insulation of grain boundaries and effectively reducing the dielectric loss of the ceramics. However, the presence of Cu<superscript>+</superscript> in (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>x</subscript>Ca<subscript>1−x</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> (x ≥ 0.3) ceramics with high doping content could affect the polarization mechanism inside the ceramics and improve their dielectric properties. The dielectric constant of (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>0.3</subscript>Ca<subscript>0.7</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> ceramics was as high as 25 282, with a dielectric loss of 0.061 (at room temperature and 10 Hz), and it had good dielectric stability. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
11
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
176584605
Full Text :
https://doi.org/10.1007/s10854-024-12485-9