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Effect of doping ion concentration on the microstructure and dielectric properties of (Na1/2Eu1/2)xCa1−xCu3Ti4O12 ceramics.
- Source :
- Journal of Materials Science: Materials in Electronics; Apr2024, Vol. 35 Issue 11, p1-14, 14p
- Publication Year :
- 2024
-
Abstract
- A series of single phase (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>x</subscript>Ca<subscript>1−x</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> (x = 0, 0.01, 0.05, 0.1, 0.2, 0.3, 0.35, 0.4 and 0.45) ceramics with different doping amounts were successfully prepared by high temperature solid-state reaction method. The microstructure, ion valence, and dielectric properties of the ceramics were systematically studied. The results indicated that with the increase of Na<superscript>+</superscript> and Eu<superscript>3+</superscript> ions concentration in (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>x</subscript>Ca<subscript>1−x</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> ceramics, Na and Eu elements accumulated at the grain boundaries of ceramics, thereby increasing the insulation of grain boundaries and effectively reducing the dielectric loss of the ceramics. However, the presence of Cu<superscript>+</superscript> in (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>x</subscript>Ca<subscript>1−x</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> (x ≥ 0.3) ceramics with high doping content could affect the polarization mechanism inside the ceramics and improve their dielectric properties. The dielectric constant of (Na<subscript>1/2</subscript>Eu<subscript>1/2</subscript>)<subscript>0.3</subscript>Ca<subscript>0.7</subscript>Cu<subscript>3</subscript>Ti<subscript>4</subscript>O<subscript>12</subscript> ceramics was as high as 25 282, with a dielectric loss of 0.061 (at room temperature and 10 Hz), and it had good dielectric stability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 35
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 176584605
- Full Text :
- https://doi.org/10.1007/s10854-024-12485-9