Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission.

MLA

Abdukayumov, Khasan, et al. “Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission.” Advanced Materials, vol. 36, no. 14, Apr. 2024, pp. 1–11. EBSCOhost, https://doi.org/10.1002/adma.202304243.

APA

Abdukayumov, K., Mičica, M., Ibrahim, F., Vojáček, L., Vergnaud, C., Marty, A., Veuillen, J., Mallet, P., de Moraes, I. G., Dosenovic, D., Gambarelli, S., Maurel, V., Wright, A., Tignon, J., Mangeney, J., Ouerghi, A., Renard, V., Mesple, F., Li, J., & Bonell, F. (2024). Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission. Advanced Materials, 36(14), 1–11. https://doi.org/10.1002/adma.202304243

Chicago

Abdukayumov, Khasan, Martin Mičica, Fatima Ibrahim, Libor Vojáček, Céline Vergnaud, Alain Marty, Jean‐Yves Veuillen, et al. 2024. “Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission.” Advanced Materials 36 (14): 1–11. doi:10.1002/adma.202304243.