Cite
An Ultra-Low-Power 65 nm Single-Tank 24.5-to-29.1 GHz G m -Enhanced CMOS LC VCO Achieving 195.2 dBc/Hz FoM at 1 MHz.
MLA
Kurtoglu, Abdullah, et al. “An Ultra-Low-Power 65 Nm Single-Tank 24.5-to-29.1 GHz G m -Enhanced CMOS LC VCO Achieving 195.2 DBc/Hz FoM at 1 MHz.” Electronics (2079-9292), vol. 13, no. 6, Mar. 2024, p. 1162. EBSCOhost, https://doi.org/10.3390/electronics13061162.
APA
Kurtoglu, A., Shirazi, A. H. M., Mirabbasi, S., & Miri Lavasani, H. (2024). An Ultra-Low-Power 65 nm Single-Tank 24.5-to-29.1 GHz G m -Enhanced CMOS LC VCO Achieving 195.2 dBc/Hz FoM at 1 MHz. Electronics (2079-9292), 13(6), 1162. https://doi.org/10.3390/electronics13061162
Chicago
Kurtoglu, Abdullah, Amir H. M. Shirazi, Shahriar Mirabbasi, and Hossein Miri Lavasani. 2024. “An Ultra-Low-Power 65 Nm Single-Tank 24.5-to-29.1 GHz G m -Enhanced CMOS LC VCO Achieving 195.2 DBc/Hz FoM at 1 MHz.” Electronics (2079-9292) 13 (6): 1162. doi:10.3390/electronics13061162.