Cite
Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure.
MLA
McCandless, J. P., et al. “Accumulation and Removal of Si Impurities on β-Ga2O3 Arising from Ambient Air Exposure.” Applied Physics Letters, vol. 124, no. 11, Mar. 2024, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0191280.
APA
McCandless, J. P., Gorsak, C. A., Protasenko, V., Schlom, D. G., Thompson, M. O., Xing, H. G., Jena, D., & Nair, H. P. (2024). Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure. Applied Physics Letters, 124(11), 1–5. https://doi.org/10.1063/5.0191280
Chicago
McCandless, J. P., C. A. Gorsak, V. Protasenko, D. G. Schlom, Michael O. Thompson, H. G. Xing, D. Jena, and H. P. Nair. 2024. “Accumulation and Removal of Si Impurities on β-Ga2O3 Arising from Ambient Air Exposure.” Applied Physics Letters 124 (11): 1–5. doi:10.1063/5.0191280.