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Strong electron--phonon coupling and high lattice thermal conductivity in half-Heusler thermoelectric materials.

Authors :
Ruoyu Wang
Jianfeng Cai
Qiang Zhang
Xiaojian Tan
Jiehua Wu
Guoqiang Liu
Jun Jiang
Source :
Physical Chemistry Chemical Physics (PCCP); 3/21/2024, Vol. 26 Issue 11, p8932-8937, 6p
Publication Year :
2024

Abstract

Traditional half-Heusler thermoelectric materials, identified as 18-electron compounds, are characterized by the high power factor and the high lattice thermal conductivity. Interestingly, the emerging 19-electron half-Heusler compounds were also found to be promising thermoelectric materials, but with a 5-10 times lower lattice thermal conductivity. Since the two kinds of compounds have similar chemical and physical structures, such as TiCoSb and VCoSb, the large difference in lattice thermal conductivity is a puzzling question. Here, we present a theoretical study to clarify the lattice thermal transport in half-Heusler thermoelectric materials. Based on electronic band structure analysis, we show that the two transition-metal elements in half-Heusler compounds form the strong and direct d--d interaction that is responsible for the high lattice thermal conductivity of 18-electron compounds. In 19-electron half-Heusler compounds, however, the extra valence electron enters the d--d antibonding states, which significantly weakens the atomic bond strength, leading to a large decrease in the cohesive energy. The resulting softened acoustic phonons enhance the phonon--phonon scattering, and thus reduce the lattice thermal conductivity significantly. By constructing an artificial 18-e compound V<subscript>0.5</subscript>Sc<subscript>0.5</subscript>CoSb, it is proved that the one less electron relative to VCoSb increases the lattice thermal conductivity significantly. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14639076
Volume :
26
Issue :
11
Database :
Complementary Index
Journal :
Physical Chemistry Chemical Physics (PCCP)
Publication Type :
Academic Journal
Accession number :
176058953
Full Text :
https://doi.org/10.1039/d3cp06160d