Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures.

The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4H-SiC integrated Schottky diodes (JBS) was studied for the first time in the operating temperature range Ti (23 and 175°C). The blocking voltage of the diodes under study, U_b, was 600 and 1700 V. For devices with U_b = 600 V, the fluence range was 5 × 10¹³–1 × 10¹⁴ cm^–2; for devices with U_b = 1700 V, the fluence range was 3 × 10¹³–6 × 10¹³ cm^–2. An increase in the irradiation temperature leads to a noticeable decrease in the effect of irradiation on the current–voltage characteristics of the diodes. The effect of annealing on the current-voltage characteristics of irradiated devices is studied. [ABSTRACT FROM AUTHOR]